Piezoelectric properties and microstructure of ceramicrete-based piezoelectric composites

Inorganic piezoelectric ceramic composite is the potential sensing element for long-term structural health monitoring due to its excellent durability and compatibility. In this study, a Ceramicrete-based piezoelectric composite is proposed preliminarily, in which the magnesium potassium phosphate cement is used as the matrix and the lead zirconate titanate particle is utilized as the functional phase. Piezoelectric properties test and microstructure analysis are performed to evaluate the testing samples. Results show that the piezoelectric performance of the composite increase with the increase of piezoelectric ceramic particle size. The value of the piezoelectric strain factor (d₃₃) can reach 83.8 pC/N, while the corresponding piezoelectric voltage factor (g₃₃) is 50.1 × 10^-3 V•m/N at the 50th day after polarization. Microstructure analysis illustrates that the interfacial transition zone (ITZ) between the matrix and the particles is dense. Moreover, the influence of aging on the composite is attributed to the continuous hydration after polarization. It indicates that the composites have a higher piezoelectric performance, which can be regarded as a promising sensing element material.     

基于FLAC3D的破碎围岩巷道支护效果分析

为了解破碎围岩分别采用锚杆支护、锚喷支护以及锚喷+锚索耦合三种支护方式下的支护效果,进而为破碎围岩巷道选择合理的支护方式提供参考。通过借助FLAC^3D软件建立数值模型,分析不同支护条件下的破碎围岩巷道位移量、应力分布以及塑性区的时空演化特征。结果表明,采用锚喷+锚索耦合支护时,可以较好的控制巷道围岩的位移量、减小应力集中效应、缩小塑性区的影响范围。     

All-printed and highly stable organic resistive switching device based on graphene quantum dots and polyvinylpyrrolidone composite

We propose all printed and highly stable organic resistive switching device (ORSD) based on graphene quantum dots (G-QDs) and polyvinylpyrrolidone (PVP) composite for non-volatile memory applications. It is fabricated by sandwiching G-QDs/PVP composite between top and bottom silver (Ag) electrodes on a flexible substrate polyethylene terephthalate (PET) at ambient conditions through a cost effective and eco-friendly electro-hydrodynamic (EHD) technique. Thickness of the active layer is measured around 97 nm. The proposed ORSD is fabricated in a 3 × 3 crossbar array. It operates switching between high resistance state (HRS) and low resistance state (LRS) with OFF/ON ratio ∼14 for more than 500 endurance cycles, and retention time for more than 30 days. The switching voltage for set/reset of the devices is ±1.8 V and the bendability down to 8 mm diameter for 1000 cycles are tested. The elemental composition and surface morphology are characterized by XPS, FE-SEM, and microscope.     

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

In this work, TiO₂/ZrO₂ bilayer thin film was prepared on fluorine doped tin oxide (FTO)/glass substrates by using a simple and low-cost chemical solution deposition method. Reproducible bipolar resistive switching (RS) characteristics in Au/TiO₂/ZrO₂/FTO/glass devices are reported in this work. TiO₂/ZrO₂ bilayer thin films prepared in this work shows reversible bipolar resistive switching and unidirectional conduction performances under applying voltage and these special performances of TiO₂/ZrO₂ bilayer thin films was first reported. Obvious resistive switching performance can be observed after setting a compliance current, the ratio of high/low resistance reached about 100 at a read voltage of +0.1V and −0.1V and the RS properties showed no obvious degradation after 100 successive cycles tests. The resistive switching characteristics of Au/TiO₂/ZrO₂/FTO/glass device can be explained by electron trapping/detrapping related with the vacancy oxygen defects in TiO₂/ZrO₂ bilayer thin film layer. According to slope fitting, the main conduction mechanisms of the sample are Ohmic and Space charge limited current mechanism.     

Controllability and observability of multi-agent systems with heterogeneous and switching topologies

ABSTRACT

This paper focuses on controllability and observability of multi-agent systems with heterogeneous and switching topologies, where the first- and the second-order information interaction topologies are different and switching. First, based on the controllable state set, a controllability criterion is obtained in terms of the controllability matrix corresponding to the switching sequence. Next, by virtue of the subspace sequence, two necessary and sufficient algebraic conditions are established for controllability in terms of the system matrices corresponding to all the possible topologies. Furthermore, controllability is considered from the graphic perspective. It is proved that the system is controllable if the union graph of all the possible topologies is controllable. With respect to observability, two sufficient and necessary conditions are derived by taking advantage of the system matrices and the corresponding invariant subspace, respectively. Finally, some simulation examples are worked out to illustrate the theoretical results.     

The analysis and comparison of two novel kinds of focusing elements as reflectors

In this article, two novel kinds of focusing elements as reflectors are analyzed and compared. One is the grooved Fresnel zone plate reflector with continuous phase‐correcting. The other called subzone paraboloid reflector, has the profile that consists of a series of paraboloids. Their diffraction efficiencies and bandwidths are described. The two elements still preserve the advantages of Fresnel zone plates, namely, low profile, high efficiency, and simple fabrication. Two dual‐reflector antennas using the proposed focusing elements as the main reflectors are simulated and the results show that these antennas have good radiation performances. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:101–108, 2015.     

Influence of domain switching process on the electrical fatigue behavior of ferroelectrics

We report an experimental approach, designed based on the recent findings that domain switching in ferroelectric ceramics can be separated into three regimes during antiparallel electric field loading, to investigate the influence of domain switching process on the electrical fatigue behavior of ferroelectrics. Uniaxial compressive stress (−2 MPã -100 MPa) and thermal loading (20 °C–150 °C) were used to tune the domain switching process. Under the same loading condition, the bipolar electrical fatigue behavior of soft lead zirconate titanate ceramics was systematically characterized. The amplitude and frequency of the applied electric field are 2 kV/mm and 10 Hz, respectively. By analyzing the evolution of the domain switching process, combined with the measured polarization and strain response, as well as the cracks observed on the surface of the specimen, it is found that the fatigue of ferroelectric ceramics was mainly related to the domain switching process near the coercive electric field: the regime 2 defined in this paper. The underlying mechanism was further discussed by considering the interplay between the domain switching process with the main factors affecting the electrical fatigue of ferroelectrics, namely defect redistribution, charge carrier injection, and crack initiation.     

碳酸盐岩岩溶储层多井评价方法及地质应用

多井评价是建立在单井精细解释对比分析基础上的预测储层及含油气性平面分布规律的技术方法,而常规测井资料无法区分碳酸盐岩岩溶储层,因而利用多井评价结果确定岩溶发育程度在平面上的分布规律就显得十分重要。为此,在岩心标定成像测井的基础上,对四川盆地高石梯—磨溪地区15口井的成像测井岩溶发育特征进行分析,建立了中二叠统茅口组岩溶发育各分带的标准成像图版,利用交会图及直方图分析各分带的常规测井响应特征,在此基础上形成了电成像测井刻度常规测井识别岩溶发育带的新方法。研究结果表明:①高石梯—磨溪地区茅口组岩溶带自上而下可划分为风化壳残积带、垂直渗流岩溶带、水平潜流岩溶带以及受岩溶作用较弱的基岩;②风化壳残积带在成像测井图像显示为"暗—亮—暗"条带状模式,垂直渗流岩溶带为垂直线状与暗色斑状组合模式,水平潜流岩溶带为水平线状—层状与斑状组合模式,基岩整体显示为亮色块状模式偶见线状或斑状特征;③有效储层主要发育在垂直渗流带和水平潜流带的顶部;④该区茅口组岩溶发育主要受裂缝发育控制,而裂缝发育又与断层关系密切。结论认为,该新方法对碳酸盐岩岩溶储层的多井评价具有普遍适用性,为四川盆地中二叠统风险探井的部署提供了技术支撑。     

A charge sharing–based switching scheme for SAR ADCs

This paper presents an energy-efficient switching scheme for successive approximation register (SAR) analogue-to-digital converter (ADC). The proposed scheme employs charge recycling method to keep the capacitor arrays free of transitional energy between bit generations except reset phase. In comparison with the conventional switching scheme, the proposed one achieves 100% transitional energy saving without considering reset phase. In addition, configuration of a 10-bit SAR ADC shows that the proposed switching scheme reduces the capacitor area by 25% compared with the conventional switching scheme.